Improved inversion channel mobility for 4H- SiC MOSFETs following high temperature anneals in nitric oxide

C.C., Tin, (2001) Improved inversion channel mobility for 4H- SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters.

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Item Type: Article
Uncontrolled Keywords: Improved inversion channel mobility for 4H- SiC MOSFETs following high temperature anneals i
Subjects: University Structure > Faculty of Engineering, Science and Mathematics > School of Engineering Sciences
Depositing User: MR. ADNAN YAHYA
Date Deposited: 30 May 2013
Last Modified: 27 Dec 2013
URI: http://repository.um.edu.my/id/eprint/29961

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